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  this is information on a product in full production. september 2014 docid18223 rev 6 1/15 15 STL160N3LLH6 n-channel 30 v, 0.0011 ? typ., 45 a stripfet? h6 power mosfet in a powerflat? 5x6 package datasheet ? production data figure 1. internal schematic diagram features ? very low on-resistance ? very low switching gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? technology, with a new trench gate structure. the resulting power mosfet exhibits a very low r ds(on) in all packages. $0y '  *  6  1 2 3 4 powerflat?5x6 order code v ds r ds(on) max i d STL160N3LLH6 30 v 0.0013 ? 45 a (1) 1. the value is rated according to r thj-pcb table 1. device summary order code marking package packaging STL160N3LLH6 160n3lh6 powerflat? 5x6 tape and reel www.st.com
contents STL160N3LLH6 2/15 docid18223 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid18223 rev 6 3/15 STL160N3LLH6 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c . drain current (continuous) at t c = 25 c 240 a i d (1) drain current (continuous) at t c = 100 c 170 a i dm (1),(3) drain current (pulsed) 960 a i d (2) 2. the value is rated according to r thj-pcb. drain current (continuous) at t pcb = 25 c 45 a i d (2) drain current (continuous) at t pcb =100 c 32 a i dm (2),(3) 3. pulse width limited by safe operating area. drain current (pulsed) 180 a p tot (1) total dissipation at t c = 25 c 136 w p tot (2) total dissipation at t pcb = 25 c 4.8 w t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 1.1 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-pcb 31.3 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current (pulse width limited by t j max) 35 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av ) 900 mj
electrical characteristics STL160N3LLH6 4/15 docid18223 rev 6 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 30 v i dss zero gate voltage drain current v gs = 0, v ds = 30 v 1 a v ds = 30 v at t c = 125 c 10 a i gss gate body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 17.5 a 0.0011 0.0013 ? v gs = 4.5 v, i d = 17.5 a 0.0016 0.0020 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds = 25 v, f=1 mhz -6375 - pf c oss output capacitance - 1230 - pf c rss reverse transfer capacitance -675 - pf q g total gate charge v dd =15 v, i d = 35 a v gs =4.5 v (see figure 14) - 61.5 - nc q gs gate-source charge - 20 nc q gd gate-drain charge - 24 nc r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.4 - ? table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15 v, i d = 17.5 a, r g =4.7 ? , v gs =10 v (see figure 13) -22.5- ns t r rise time - 32 - ns t d(off) turn-off delay time - 107.5 - ns t f fall time - 54 - ns
docid18223 rev 6 5/15 STL160N3LLH6 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 45 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 180 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5%. forward on voltage v gs =0, i sd = 35 a - 1.1 v t rr reverse recovery time i sd = 35 a, di/dt = 100 a/s, v dd =25 v -37.2 ns q rr reverse recovery charge - 36 nc i rrm reverse recovery current - 1.9 a
electrical characteristics STL160N3LLH6 6/15 docid18223 rev 6 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100ms 1s 10ms tj=175c tpcb=25c single pulse am08599v1 single pulse 0.05 0.02 0.01 =0.5 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 10 -3 10 -2 10 -1 10 -6 10 -4 10 -2 10 pcb -1 0 am15985v1 i d 60 40 20 0 0 1.0 v ds (v) 2.0 (a) 0.5 1.5 2.5 80 100 3v 4v 120 140 160 180 am08600v1 i d 30 20 10 0 0 4 v gs (v) (a) 2 40 50 1 3 60 70 v ds =2v 80 am08601v1 v (br)dss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 am08602v1 r ds(on) 1.05 1.00 0.95 0 20 i d (a) (m ) 10 30 1.10 1.15 v gs =10v 5 15 25 35 40 am08603v1
docid18223 rev 6 7/15 STL160N3LLH6 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 v dd =15v i d =35a 100 12 120 am08604v1 c 1000 0 0 10 v ds (v) (pf) 5 20 ciss coss crss 2000 3000 4000 5000 6000 7000 8000 9000 15 25 30 am08605v1 v gs(th) 0.8 0.6 0.4 0.2 -75 t j (c) (norm) -25 1.0 75 25 125 175 1.2 am08606v1 r ds(on) 1.2 0.8 0.4 -75 t j (c) (norm) -25 75 25 125 175 0.6 1.0 1.4 1.6 1.8 am08607v1 v sd 0 20 i sd (a) (v) 10 30 35 0.3 0.4 0.5 0.6 0.7 0.8 0.9 25 15 5 t j =-55c t j =25c t j =175c 40 am08608v1
test circuits STL160N3LLH6 8/15 docid18223 rev 6 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid18223 rev 6 9/15 STL160N3LLH6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL160N3LLH6 10/15 docid18223 rev 6 figure 19. powerflat? 5x6 type s-c mechanical data b,b& 7rsylhz 6lghylhz %rwwrpylhz     3lq lghqwlilfdwlrq     3lq lghqwlilfdwlrq 
docid18223 rev 6 11/15 STL160N3LLH6 package mechanical data figure 20. powerflat? 5x6 recommended footprint (dimensions in mm) table 9. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k1.05 1.35 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28 footprint
packaging mechanical data STL160N3LLH6 12/15 docid18223 rev 6 5 packaging mechanical data figure 21. powerflat? 5x6 tape (a) figure 22. powerflat? 5x6 package orientation in carrier tape a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
docid18223 rev 6 13/15 STL160N3LLH6 packaging mechanical data figure 23. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
revision history STL160N3LLH6 14/15 docid18223 rev 6 6 revision history table 10. document revision history date revision changes 10-nov-2010 1 first release. 10-nov-2011 2 section 4: package mechanical data has been updated. minor text changes. 31-jul-2013 3 ? modified: i d in the title and in the features table , table 5 , 6 and 7 ? modified: values on the table 2 , r thj-case on the table 3 , max values for the i sd and i sdm on table 8 ? updated: section 4: package mechanical data ? inserted: section 5: packaging mechanical data ? modified: figure 13 , 14 , 15 and 16 ? minor text changes 09-aug-2013 4 ? modified: drain current (continuous) at t c = 100 c value and drain current (continuous) at t pcb =100 c value ? modified: test conditions of r ds(on) ? modified: i d in table 6 and 7 ? modified: i sd in table 8 ? modified: figure 2 , 3 , 4 , 5 , 7 , 12 , 13 , 14 , 15 and 16 ? updated: section 4: package mechanical data ? minor text changes 24-sep-2013 5 ? modified: marking in table 1 ? minor text changes 23-sep-2014 6 ? modified: title ? modified: features ? modified: description ? updated: section 4: package mechanical data ? minor text changes
docid18223 rev 6 15/15 STL160N3LLH6 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved


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